India Achieves Milestone with Inaugural Silicon Carbide Semiconductor Manufacturing Facility

India has marked a significant advancement in its semiconductor industry with the establishment of its first Silicon Carbide (SiC) semiconductor manufacturing plant in Odisha. This ambitious project by RIR Power Electronics, backed by a substantial investment of ₹618 crore, is on track to commence production of Epitaxy Wafers by December 2025. This development signifies a crucial step forward in enhancing India's domestic manufacturing capabilities under the Make in India initiative.

Silicon Carbide semiconductors are recognized for their superior durability and efficiency, offering transformative potential across a range of vital sectors. These include electric vehicles, where they can contribute to increased efficiency and performance; renewable energy systems, enabling more effective power management; power electronics, facilitating the creation of more efficient and compact devices; and industrial automation, leading to improved operational efficiency and reduced energy consumption. The adoption of SiC technology is poised to drive significant improvements in energy utilization and overall system performance.

Supported by attractive incentives approved by the Odisha state government, this advanced facility is expected to generate approximately 750 skilled jobs, positioning the state as a growing hub within the global semiconductor ecosystem. This initiative underscores India's commitment to building a robust domestic supply chain and fostering technological progress in strategically important areas such as green hydrogen, aerospace, and defense.

This landmark development highlights India's ongoing efforts to strengthen its technological infrastructure and advance its capabilities in critical sectors. Stay informed for further updates on India's progress in the semiconductor industry and its impact on various technological domains.